Study of Current-voltage Characteristic using Deep Level Transient Spectroscopy Technique of Schottky Diode Made of SIC.

H.M. Noor ul-Huda Khan Asghar; Zaheer Abbas Gilani; Irshad Ahmad; Shuang Shi; Yi Tan

Author(s)

H.M. Noor ul-Huda Khan Asghar Department of Physics, Faculty of Arts and Basic Sciences, Balochistan University of Information Technology, Engineering and management Sciences, Quetta, Pakistan; School of Materials Science and Engineering, Faculty of Mechanical Engineering and Energy Dalian University of Technology, Dalian, China

Zaheer Abbas Gilani Department of Physics, Faculty of Arts and Basic Sciences, Balochistan University of Information Technology, Engineering and management Sciences, Quetta, Pakistan,

Irshad Ahmad Government. Technical Training Institute, Multan, Pakistan,

Shuang Shi School of Materials Science and Engineering, Faculty of Mechanical Engineering and Energy Dalian University of Technology, Dalian, China; Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China

Yi Tan School of Materials Science and Engineering, Faculty of Mechanical Engineering and Energy Dalian University of Technology, Dalian, China; Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China

Abstract

Current spectroscopy was employed to investigate Silicon Carbide (SiC). DLTS standard setup was performed to study the current voltage measurement of respective schottky diode. The current voltage measurement of SiC schottky diode was carried out at different temperatures keeping the same biasing setting. From these measurements the behavior of the material is: The ideality factor of SiC at room temperature was found to be 1.9894 that was little bit improved i.e. ~ 1.7268 when temperature was increased ~400K. However values increased with decrease in temperature for the material. The higher value of ideality factor is attributed to high diffusion or tunneling current. The barrier height of SiC at room temperature was calculated as 0.995eV which remained nearly constant with increase in temperature. The change in the barrier height is related to the effective leakage current at high temperature. Reverse saturation current calculated for SiC at room temperature was 6.5706 ×10-13A. Its value increased up to 1.72×10-9A at 400K.

Publication Details

Page(s) 111-114

DOI DOI not available

Published Journal: Journal of Applied and Emerging Sciences , Volume: 6, Issue: 2, Year: 2016

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