High power ldmos transistor for rf-amplifiers.

A. Kashif; Q. Wahab; C. Svensson

Author(s)

A. Kashif Department of Physics, Chemistry and Biology (IFM), Linkoping University, Linkoping, Sweden

Q. Wahab Department of Physics, Chemistry and Biology (IFM), Linkoping University, Linkoping, Sweden

C. Svensson Department of Electrical Engineering (ISY), Linkoping University, Linkoping, Sweden

Abstract

We designed simulated and optimized laterally diffused Si-MOSFET (LDMOS) transistors in Sentaurus TCAD software. By introducing excess interface charge density at the RESURF (reduced surface field) region, a power density 1.5 W/mm with a PAE (power added efficiency) of 45 % at 3 GHz were obtained. The gain was 20.3 dB. These results show the enhancement in RF performance by introducing excess interface charge density at the RESURF region.

Publication Details

Page(s) 1-4

DOI DOI not available

Published Journal: Proceedings 5th International Bhurban Conference on Applied Sciences and Technology , Volume: 0, Issue: 0, Year: 2007

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