High power ldmos transistor for rf-amplifiers. | [Proceedings 5th International Bhurban Conference on Applied Sciences and Technology • 2007]

Author(s):

1. A. Kashif: Department of Physics, Chemistry and Biology (IFM), Linkoping University, Linkoping, Sweden

2. Q. Wahab: Department of Physics, Chemistry and Biology (IFM), Linkoping University, Linkoping, Sweden

3. C. Svensson: Department of Electrical Engineering (ISY), Linkoping University, Linkoping, Sweden

Abstract:

We designed simulated and optimized laterally diffused Si-MOSFET (LDMOS) transistors in Sentaurus TCAD software. By introducing excess interface charge density at the RESURF (reduced surface field) region, a power density 1.5 W/mm with a PAE (power added efficiency) of 45 % at 3 GHz were obtained. The gain was 20.3 dB. These results show the enhancement in RF performance by introducing excess interface charge density at the RESURF region.

Page(s): 1-4

DOI: DOI not available

Published: Journal: Proceedings 5th International Bhurban Conference on Applied Sciences and Technology , Volume: 0, Issue: 0, Year: 2007

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