Abstract:
Crystalline ZnSiP2 was prepared from Tin solution. If has ruby red colour and preferential direction of growth in direction. Hall effect measurements were performed on various specimen, which gave values of mobility, carrier concentration and also type of ZnSiFi thus prepared as n-type material. The temperature dependent study of conductivity and Hall effect was also performed. The conductivity study lead to the donor level at 0.046 eV below room temperature. The temperature dependence of Hall effect show dominant impurity mode scattering at low temperatures and a possible lattice mode scattering at high temperatures. From Seebeck effect variation of NL and m* was driven from 250' K to 420' K. The value of m*. 0.475 me is obtained for ZnSiPz.
Page(s):
77-97
DOI:
DOI not available
Published:
Journal: Journal of Scientific Research, Volume: 14, Issue: 1--2, Year: 1985