Theoretical calculations of temperature-dependent energy gap, intrinsic carrier concentrations, fermi level and induced charge in the gold-doped and non-gold-doped silicon. | [Pakistan Journal of Scientific and Industrial Research • 1980]

Author(s):

1. G. R. Moghal: Pakistan Council of Scientific & Industrial Research, PCSIR Laboratories Complex, Karachi, Pakistan

Abstract:

The communication presents calculation of the total induced charge in the gold-doped and non-gold-doped silicon at various temperatures; these calculations are based on theoretical values of the stipulated variation of Fermi level with temperature and gold concentrations in gold-doped and non-gold-doped silicon which are also presented. The plot of the experimental values of the intrinsic carrier concentration against the reciprocal of temperature (K) is compared with the one based on theoretical values. The agreement is fairly good below 300° K when the variation of the energy gap with temperature is counted.

Page(s): 87-92

DOI: DOI not available

Published: Journal: Pakistan Journal of Scientific and Industrial Research, Volume: 23, Issue: 3--4, Year: 1980

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