Nano-crystallinity in DC reactive sputtered AIN thin films. | [Proceedings Conference on Nano-Science and Technology in Pakistan • 2005]

Author(s):

1. A. Mahmood: Applied Physics Division, PINSTECH, Post Office Nilore, Islamabad, Pakistan

2. Q. Raza: Applied Physics Division, PINSTECH, Post Office Nilore, Islamabad, Pakistan

3. U. Aziz: Applied Physics Division, PINSTECH, Post Office Nilore, Islamabad, Pakistan

4. R. Machorro: Centro de Ciencias de la Materia Condensada, UNAM, Ensenada, Mexico

5. J. Heiras: Centro de Ciencias de la Materia Condensada, UNAM, Ensenada, Mexico

6. S. Muhl: Instituto de Investigaciones en Materiales, UNAM, Apdo, Mexico

Abstract:

Aluminium nitride, AIN, thin films were prepared by DC-reactive magnetron sputtering. The deposition parameters like the plasma current; substrate temperature; gas composition etc. were varied over a wide range. Several analytical techniques were utilized to study the relationship between film properties and preparation conditions. The dielectric function in the visible range and the absorption spectra were studied by spectroscopic ellipsometry. Surface analysis was performed by X-ray photoelectron spectroscopy (XPS) to examine the bonding nature and chemical states on the surface of the film. Nano-crystallites were observed by Atomic Force Microscope. Preferred orientation control of crystallites has also been observed by XRD. The purpose of this work was to find out a correlation between the deposition conditions and the physical properties of the film.

Page(s): 117-126

DOI: DOI not available

Published: Journal: Proceedings Conference on Nano-Science and Technology in Pakistan, Volume: 0, Issue: 0, Year: 2005

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