Abstract:
Reports on the influence of fabrication procedures on the performance of solar cells based on ratio frequency sputter deposited films of n-type indium tin oxide on single crystal substrates of p-type indium phosphide. In particular, the effect of exposing the substrate to a very low power plasma prior to deposition of the film is considered. It is shown that devices with an Air Mass 1.5 efficiency of approximately 16%, total area, (equivalent to 18.7% active area) can be produced when the low power plasma exposure time has been optimized. Depth profiling has shown that these devices are almost certainly very shallow buried homojunctions, the depth of which depends essentially on the substrate doping density. The capacitance/voltage profiles and absolute quantum efficiencies are also influenced by the low power plasma exposure time; its effect apparently being to change the distribution of impurities near the surface of the In
Page(s):
152-157
DOI:
DOI not available
Published:
Journal: Pakistan Journal of Scientific and Industrial Research, Volume: 30, Issue: 2, Year: 1987