Author(s):
1. Syed Mudassir:
Faculty of Information and Communication Technology, Balochistan University of Information Technology, Engineering and Management Sciences,Quetta,Pakistan
2. Jan Muhammad:
Faculty of Information and Communication Technology, Balochistan University of Information Technology, Engineering and Management Sciences,Quetta,Pakistan
Abstract:
In the past decade with the advent of high speed electronic devices, the global market usage for personal, cellular communication devices and services such as expansion to broadband internet access third, fourth-generation (3G/4G) mobile systems coming closer to reality. In the manufacturing industry, the Radio Frequency (RF) and Microwave power amplifiers are beginning to be the focus of attention. There are numerous high power amplifiers available in the market, giving the industry choices to range from price to performance factors. In this paper, we present the materials properties of Gallium Nitride (GaN) with a comparative analysis to the competing materials used for applications which require higher power and high frequency devices. The reliability issues of Aluminum Gallium Nitride (AlGaN)/GaN based High Electron Mobility Transistors (HEMTs) are the main hurdle for the commercialization of GaN based devices. Due to remarkable potential in other fields, GaN can offer many solutions in the electronic devices. Overall, with help of recent studies, we discuss competitive advantages of GaN based devices and amplifiers for commercial products.
Page(s):
141-146
DOI:
DOI not available
Published:
Journal: Journal of Applied and Emerging Sciences , Volume: 4, Issue: 2, Year: 2013
Keywords:
microwave
,
bandwidth
,
Gallium Nitride
,
High Electron Mobility Transistors
,
Radio Frequency
,
Aluminium Gallium Nitride
References:
References are not available for this document.
Citations
Citations are not available for this document.