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Threshold energy for Cadmium displacement in Erbium implanted Cadmium Telluride.
Author(s):
1. Ch. Muhammad Ramzan Tahir: Department of Physics, Hull University, Hull, U. K
Abstract:
The cathodeluminescence emission spectrum of Er3+ in cadmium Telluride at 10 K has been studied before and after irradiation with electrons capable of producing atomic displacements. Cadmium Telluride had been previously implanted by 50 KeV Er3+ ions and given suitable post-unplantation annealing treatment. It has been observed that the Er3+ emission intensity at 7907 Å was found to increase with electron damage above a certain threshold energy. In case of monitoring the production of cation  displacement yields, a threshold incident electron energy of 255 keV for enhancement ( ~~ 5.66 eV cadmium displacement threshold energy). Warming the electron-damaged samples to temperature greater than 260 oC allows complete removal of the defects produced by the electron damage. Study of the intensity decreases as a function of electron fluence for those Er3+ emission peaks which are reduced by damage show the rare earth excitation process to be indirect.
Page(s): 123-126
DOI: DOI not available
Published: Journal: Science International, Volume: 15, Issue: 2, Year: 2003
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