Abstract:
Thermal treatment of silicon carbide crystals in an inert atmosphere of a plasma torch, in the high temperature range 2000-3000°C was carried out. Evidence is provided that such a treatment can reveal dislocations. The treatment does not leave any reaction products and the surface of the crystal is left clean and shiny.
Page(s):
61-62
DOI:
DOI not available
Published:
Journal: Pakistan Journal of Scientific and Industrial Research, Volume: 29, Issue: 1, Year: 1986