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Thermal quenching of tellurium isoelectronic trap in donor implanted ZnS:Te.
Author(s):
1. P. R. Jaffery: Physics Department, University of Karachi, Karachi, Pakistan
Abstract:
The temperature quenching of the 3.17 eV (391 nm.) tellurium emission above 140 K restricts the usefulness of Zns:Te as a room temperature scintillation device but can be reduced by the addition of donors. The relative efficiency at 300 K to that at low temperature increases from 3% in ZnS:Te to about 16% in ZnS:Te containing 1.3 x 1019 donors an-3 .
Page(s): 133-138
DOI: DOI not available
Published: Journal: Karachi University Journal of Science, Volume: 12, Issue: 2, Year: 1984
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